Photovoltaic devices that use Cu(In, Ga)Se2 (CIGS) as an absorber layer have improved in recent years, and have the potential to achieve even higher efficiencies. The most common fabrication method produces a CIGS absorber layer with a steep Ga gradient having low levels of Ga at the front of the CIGS absorber layer, which causes a low bandgap and a low open-circuit voltage. These devices also exhibit a poor microstructure with voids, as well as problematic contacts. A fabrication method that homogenizes Ga distribution would enable the creation of higher quality, more efficient CIGS absorber layers.
from Energy Innovation Portal Technology Ticker https://techportal.eere.energy.gov/technology.do/techID=1581
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